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13 June 2022 Resist and reticle activities towards High-NA EUV ecosystem readiness
Jara Santaclara, Weimin Gao, Eric Hendrickx, Vincent Wiaux, Joern-Holger Franke, Emily Gallagher, Kannan Keizer, Tatiana Kovalevich, Jo Finders
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Proceedings Volume PC12051, Optical and EUV Nanolithography XXXV; PC1205105 (2022) https://doi.org/10.1117/12.2614162
Event: SPIE Advanced Lithography + Patterning, 2022, San Jose, California, United States
Abstract
High-NA EUV lithography will improve resolution by increasing the EUV scanner NA from 0.33 to 0.55. To fully benefit from the resolution gain offered by the better scanner lens, it is key to develop and improve the EUV ecosystem. The role of the ecosystem is to ensure timely availability of the advanced resist materials, photomasks, metrology techniques, OPC/imaging strategies, and patterning techniques. In this context, in parallel to the EXE:5000 0.55 NA EUV scanner manufacturing, imec and ASML, together with our partners, are addressing the main challenges and needs towards High-NA ecosystem readiness. In this paper, we will discuss the key findings from simulations and experimental work to develop the high-NA lithography ecosystem (resist and patterning, mask technology) and highlight the key areas where development is needed.
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Jara Santaclara, Weimin Gao, Eric Hendrickx, Vincent Wiaux, Joern-Holger Franke, Emily Gallagher, Kannan Keizer, Tatiana Kovalevich, and Jo Finders "Resist and reticle activities towards High-NA EUV ecosystem readiness", Proc. SPIE PC12051, Optical and EUV Nanolithography XXXV, PC1205105 (13 June 2022); https://doi.org/10.1117/12.2614162
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KEYWORDS
Photomasks
Ecosystems
Extreme ultraviolet
Optical lithography
Reticles
Etching
Extreme ultraviolet lithography
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