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19 July 2023 Ion-induced optically active defect qubits in silicon carbide
Shyama Rath, Gaurav Gupta, Shin-ichiro Sato
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Proceedings Volume PC12633, Photonics for Quantum 2023; PC126330C (2023) https://doi.org/10.1117/12.2679228
Event: Photonics for Quantum, 2023, Rochester, New York, United States
Abstract
Optically active point defects in the wide-bandgap semiconductors, diamond and SiC, are of interest as solid-state qubits for quantum photonics and metrology. The negatively charged silicon-vacancy (VSi) point defect in the 4H polytype of SiC consisting of a vacancy on a silicon site in SiC is a prominent defect qubit that has attractive features such as single-photon emission and long spin coherence times relevant for magnetic and temperature sensors, and single photon emitters. This work investigates ion irradiation protocols for the generation of defect qubits and their addressability by optical techniques of photoluminescence spectroscopy and optically detected magnetic resonance.
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Shyama Rath, Gaurav Gupta, and Shin-ichiro Sato "Ion-induced optically active defect qubits in silicon carbide", Proc. SPIE PC12633, Photonics for Quantum 2023, PC126330C (19 July 2023); https://doi.org/10.1117/12.2679228
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KEYWORDS
Quantum communications
Silicon carbide
Active optics
Solid state electronics
Phonons
Raman spectroscopy
Silicon
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