The negatively charged silicon vacancy center (SiV-) in diamond is a promising candidate for single-spin quantum sensing at sub-kelvin temperatures, which requires shallow and optically coherent emitters. We present a robust, scalable approach for creating individual, ∼50nm deep SiV- with lifetime-limited optical linewidths in diamond-nanopillars through an easy-to-realize charge-stabilization scheme, based on 445nm illumination, enabling continuous PLE spectroscopy, without further charge stabilization or repumping. Our results constitute a key step towards the use of near-surface, optically coherent SiV- for sensing under extreme conditions, and offer a powerful approach for stabilizing the charge-environment of diamond color centers for quantum technology applications.
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