Characterization Of In-Plane Wafer Distortion In An N-Channel Metal Oxide Semiconductor (NMOS) Production Process

N. H. Tsai; C. N. Ahlquist

doi:10.1117/12.958630

5 September 1980 Characterization Of In-Plane Wafer Distortion In An N-Channel Metal Oxide Semiconductor (NMOS) Production Process

N. H. Tsai, C. N. Ahlquist

Author Affiliations +

Proceedings Volume 0221, Developments in Semiconductor Microlithography V; (1980) https://doi.org/10.1117/12.958630
Event: Semiconductor Microlithography V, 1980, San Jose, United States

Abstract

This study reports the extent of wafer distortion at different stages in a standard NMOS production process and the residual distortion after linear correction. Measured with Manufacturing Electron Beam Exposure System (MEBES), the statistical normal distributions of the distortion at the edge of a 3 inch wafer are: 0.14 ±0.21 μm (2σ) after oxide and nitride, 0.22 ±0.24 μm after field oxidation, 0.43 ±0.30 μm after polysilicon deposition, 0.44 ±0.37 μm after pyroglass and 0.11 ±0.35 μm after aluminum evaporation. These results show the erratic response of the wafers to the production process: e.g., the wafer expansion ranges from 0.13 μm to 0.73 μm after polysilicon deposition. By applying a linear correction to these distortions wafer by wafer, the ±2σ residual distortion is less than ±0.25 μm, which is the accuracy of this measurement technique.

Citation Download Citation

N. H. Tsai and C. N. Ahlquist "Characterization Of In-Plane Wafer Distortion In An N-Channel Metal Oxide Semiconductor (NMOS) Production Process", Proc. SPIE 0221, Developments in Semiconductor Microlithography V, (5 September 1980); https://doi.org/10.1117/12.958630

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