Electro-Optical Characterization Of Semiconductors

W. Y. Lum; A. K. Nedoluha; H. H. Wieder

doi:10.1117/12.931685

30 April 1981 Electro-Optical Characterization Of Semiconductors

W. Y. Lum, A. K. Nedoluha, H. H. Wieder

Proceedings Volume 0276, Optical Characterization Techniques for Semiconductor Technology; (1981) https://doi.org/10.1117/12.931685
Event: 1981 Microlithography Conferences, 1981, San Jose, United States

Abstract

The effect of semiconductor surfaces and interfaces on the electro-optical response of semiconductor structures has been investigated experimentally and theoretically. The dependence of photoconductance (PC), photoelectronagnetic (PEM) current, and photovoltage (PV), on the gate bias voltage in n-Si MOSFET-type structures has been calculated and com-pared with experiment. The characteristic feature is a minimum of the PEM current and of PC in depletion. Quantitative discrepancies occurring in depletion and inversion are tentatively explained by nonuniformities in the surface potential and by leakage current. The results, obtained for uniform illumination, are compared with the electro-optical response to point illumination and with measurements on unpassivated silicon samples. In bicrystals of GaAs and of InP, the PEM and PC response to a laser beam scanned across the grain boundary suggests that those grain boundaries are interior surfaces with properties similar to outer surfaces of the corresponding materials.

Citation Download Citation

W. Y. Lum, A. K. Nedoluha, and H. H. Wieder "Electro-Optical Characterization Of Semiconductors", Proc. SPIE 0276, Optical Characterization Techniques for Semiconductor Technology, (30 April 1981); https://doi.org/10.1117/12.931685

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