Faraday Rotation And Ellipticity In Silicon Mosfets: Properties Of Tne 2D Electron Gas

Herbert Piller

doi:10.1117/12.946325

28 June 1985 Faraday Rotation And Ellipticity In Silicon Mosfets: Properties Of Tne 2D Electron Gas

Herbert Piller

Proceedings Volume 0524, Spectroscopic Characterization Techniques for Semiconductor Technology II; (1985) https://doi.org/10.1117/12.946325
Event: 1985 Los Angeles Technical Symposium, 1985, Los Angeles, United States

Abstract

The Faraday rotation is a sensitive method for determining the effective mass ot the charge carriers in a two-dimensional (20) electron gas. One of the most important techniques in studying surfaces and interfaces of silicon is the metal-oxide-semiconductor (MOS) technique. The electric field applied between the metal layer and the silicon results in a quantization of the charge distribution. The resonance effective mass, the scattering parameters, and the populations of the subbands may be determined at light frequencies close or equal to the cyclotron frequency. The technique could also be applied to study other semiconductors. In III-V compound semiconductors and narrow-gap semiconductors the effective mass is much smaller than in silicon. Since the tree carrier Faraday rotation is inversely proportional to the effective mass squared, the 21) Faraday rotation should be easily observable in these semiconductors.

Citation Download Citation

Herbert Piller "Faraday Rotation And Ellipticity In Silicon Mosfets: Properties Of Tne 2D Electron Gas", Proc. SPIE 0524, Spectroscopic Characterization Techniques for Semiconductor Technology II, (28 June 1985); https://doi.org/10.1117/12.946325

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