Paper
22 November 1986 Cadmium Mercury Telluride - A UK Perspective
Anthony W Vere
Author Affiliations +
Proceedings Volume 0659, Materials Technologies for Infrared Detectors; (1986) https://doi.org/10.1117/12.938532
Event: 1986 International Symposium/Innsbruck, 1986, Innsbruck, Austria
Abstract
Melt-growth of bulk material at high temperatures leads to stress-and diffusion-induced dislocations, precipitation and non-uniform alloy composition. These defects can be reduced by epitaxial growth at lower temperatures, but epitaxial processes are prone to surface and substrate-layer interface defects and the propagation of line defects from the substrate. Results from the UK R&D programme are used to illustrate the ways in which many of these problems are being solved.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Anthony W Vere "Cadmium Mercury Telluride - A UK Perspective", Proc. SPIE 0659, Materials Technologies for Infrared Detectors, (22 November 1986); https://doi.org/10.1117/12.938532
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Cited by 7 scholarly publications.
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KEYWORDS
Interfaces

Liquid phase epitaxy

Tellurium

Cadmium

Mercury

Epitaxy

Infrared detectors

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