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Pb1-xEuxSe is a promising material for IR devices. The band gap becomes larger with the relative content of Europium. The preparation of Pb1-xEuxSe by molecular beam epitaxy and the properties of these layers will be described.
P Norton,K H Bachem, andM Tacke
"Pb1-xEuxSe For IR Device Applications", Proc. SPIE 0659, Materials Technologies for Infrared Detectors, (22 November 1986); https://doi.org/10.1117/12.938560
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P Norton, K H Bachem, M Tacke, "Pb[sub]1-x[/sub]Eu[sub]x[/sub]Se For IR Device Applications," Proc. SPIE 0659, Materials Technologies for Infrared Detectors, (22 November 1986); https://doi.org/10.1117/12.938560