Current State Of The Art In InSb Infrared Staring Imaging Devices

A. Bahraman; C. H. Chen; J. M. Geneczko; M. H. Shelstad; R. N. Ting; J. G. Vodicka

doi:10.1117/12.939854

20 September 1987 Current State Of The Art In InSb Infrared Staring Imaging Devices

A. Bahraman, C. H. Chen, J. M. Geneczko, M. H. Shelstad, R. N. Ting, J. G. Vodicka

Proceedings Volume 0750, Infrared Systems and Components; (1987) https://doi.org/10.1117/12.939854
Event: OE LASE'87 and EO Imaging Symposium, 1987, Los Angeles, CA, United States

Abstract

A monolithic 128 x 128 InSb array is described for staring infrared imaging systems operating in the 3-5μm spectral region. The array is fabricated with only 4 mask levels and has almost 5 times higher responsivity and nearly 14 times greater wafer yield as compared to a previous design. The higher responsivity has resulted in demonstration of significantly improved thermal imagery.

Citation Download Citation

A. Bahraman, C. H. Chen, J. M. Geneczko, M. H. Shelstad, R. N. Ting, and J. G. Vodicka "Current State Of The Art In InSb Infrared Staring Imaging Devices", Proc. SPIE 0750, Infrared Systems and Components, (20 September 1987); https://doi.org/10.1117/12.939854

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