Ic Internal Functional Testing Using L-Beam

John F. Kroening Jr.

doi:10.1117/12.940386

1 September 1987 Ic Internal Functional Testing Using L-Beam

John F. Kroening Jr.

Proceedings Volume 0774, Lasers in Microlithography; (1987) https://doi.org/10.1117/12.940386
Event: Microlithography Conferences, 1987, Santa Clara, CA, United States

Abstract

The increasing complexities of Integrated Circuits (I. C.) have driven the package pin counts into the hundreds and the number of internal gates into the hundres of thousands. Verification of device performance is no longer an easy task. The conventional methods of internal functional testing using a wire probe is becoming more and more default because of decreasing cell geometries, 2um or smaller. I will present a non-contact, non-destructive laser beam probing technique for extracting the functional state of internal nodes of an IC. The effect of the laser injecting energy on silicon structures and the detection of the energy is explained. A system to automate the test process is outlined.

Citation Download Citation

John F. Kroening Jr. "Ic Internal Functional Testing Using L-Beam", Proc. SPIE 0774, Lasers in Microlithography, (1 September 1987); https://doi.org/10.1117/12.940386

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