Silicon nanowire hot electron electroluminescence

Monuko du Plessis; Trudi-Heleen Joubert

doi:10.1117/12.2243336

3 February 2017 Silicon nanowire hot electron electroluminescence

Monuko du Plessis, Trudi-Heleen Joubert

Proceedings Volume 10036, Fourth Conference on Sensors, MEMS, and Electro-Optic Systems; 1003605 (2017) https://doi.org/10.1117/12.2243336
Event: Fourth Conference on Sensors, MEMS and Electro-Optic Systems, 2016, Skukuza, Kruger National Park, South Africa

Abstract

This paper investigates the avalanche electroluminescence characteristics of pn junctions formed in silicon nanowires fabricated in a silicon-on-insula*tor (SOI) technology. Since carriers are confined to the nanowires, it is possible to study the effect of electric field strength on device performance while the current density and carrier concentrations are kept constant. This is achieved by varying the nanowire length while keeping the bias current constant, eventually driving the pn junction into the reach-through bias condition. It is observed that photon emission for photon energies higher than 1.2 eV increases when the nanowire length is reduced, while photon emission with energies less than 1.2 eV decreases. The higher electric field in the nanowire at shorter nanowire lengths enhances the high-energy photon emission and attenuates the low energy photon emission.

Citation Download Citation

Monuko du Plessis and Trudi-Heleen Joubert "Silicon nanowire hot electron electroluminescence", Proc. SPIE 10036, Fourth Conference on Sensors, MEMS, and Electro-Optic Systems, 1003605 (3 February 2017); https://doi.org/10.1117/12.2243336

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