Presentation + Paper
28 March 2017 In-depth analysis of indirect overlay method and applying in production environment
Detlef Hofmann, Frank Rabe, Stefan Buhl, Wan-Soo Kim, Boris Habets
Author Affiliations +
Abstract
Overlay measurements are done for verification of the exposure and creation of process corrections for the next lots. As throughput of the overlay measurement tools is limited, it is desirable to avoid unnecessary measurements. Another concern can be that in-transparent stacks do not allow measuring a critical overlay relation directly. We developed methods for calculation of the overlay relation between two different layers between which there is no direct overlay measurement. We qualify the impact of sampling plans and the number of dependent layers. The indirect overlay calculation is applied on a significant high volume data set.
Conference Presentation
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Detlef Hofmann, Frank Rabe, Stefan Buhl, Wan-Soo Kim, and Boris Habets "In-depth analysis of indirect overlay method and applying in production environment", Proc. SPIE 10145, Metrology, Inspection, and Process Control for Microlithography XXXI, 101450E (28 March 2017); https://doi.org/10.1117/12.2257963
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KEYWORDS
Overlay metrology

Semiconducting wafers

Model-based design

Back end of line

Metals

Front end of line

Data modeling

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