28 March 2017 Metrology capabilities and needs for 7nm and 5nm logic nodes
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Proceedings Volume 10145, Metrology, Inspection, and Process Control for Microlithography XXXI; 101450G (2017); doi: 10.1117/12.2260870
Event: SPIE Advanced Lithography, 2017, San Jose, California, United States
Abstract
This paper will provide a high level overview of the future for in-line high volume manufacturing (HVM) metrology for the semiconductor industry, concentrating on logic applications. First, we will take a broad view of the needs of patterned defect, critical dimensional (CD/3D), overlay and films metrology, and present the extensive list of applications for which metrology solutions are needed. Commonalities and differences among the various applications will be shown. We will then report on the gating technical limits of the most important of these metrology solutions to address the metrology challenges of future nodes, highlighting key metrology technology gaps requiring industry attention and investment
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Benjamin Bunday, Eric Solecky, Alok Vaid, A. F. Bello, Xintuo Dai, "Metrology capabilities and needs for 7nm and 5nm logic nodes", Proc. SPIE 10145, Metrology, Inspection, and Process Control for Microlithography XXXI, 101450G (28 March 2017); doi: 10.1117/12.2260870; http://dx.doi.org/10.1117/12.2260870
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KEYWORDS
Metrology

Critical dimension metrology

Silicon

Scanning electron microscopy

3D metrology

X-rays

Fin field effect transitor

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