Submillimeter Wave Low Temperature Admittance Of N-GaAs AND InP Diode Structures Using Transport Analysis

Clifford M. Krowne

doi:10.1117/12.978442

18 November 1989 Submillimeter Wave Low Temperature Admittance Of N-GaAs AND InP Diode Structures Using Transport Analysis

Clifford M. Krowne

Author Affiliations +

Proceedings Volume 1039, 13th Intl Conf on Infrared and Millimeter Waves; (1989) https://doi.org/10.1117/12.978442
Event: 13th International Conference on Infrared and Millimeter Waves, 1987, Honolulu, HI, United States

Abstract

Numerical simulation results for n+nn+ GaAs and InP diode structures in the 1-3 THz frequency range are presented. Cryogenic temperatures from 4 through about 77 K are examined to obtain the two-terminal admittance. Earlier work has suggested possible negative differential conductivity (NDC) at or below 4.2 K, but no consistent NDC above 77 K. Implications of the Monte Carlo data for generation of submillimeter waves at these intermediate temperatures is discussed.

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Clifford M. Krowne "Submillimeter Wave Low Temperature Admittance Of N-GaAs AND InP Diode Structures Using Transport Analysis", Proc. SPIE 1039, 13th Intl Conf on Infrared and Millimeter Waves, (18 November 1989); https://doi.org/10.1117/12.978442

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