Impact of alloy composition and well width fluctuations on linewidth broadening and carrier lifetimes in semipolar InGaN quantum wells (Conference Presentation)

Tomas K. Uzdavinys; Daniel L. Becerra; Mounir D. Mensi; Ruslan Ivanov; Shuji Nakamura; Steven P. DenBaars; James S. Speck; Saulius Marcinkevicius

doi:10.1117/12.2289809

14 March 2018 Impact of alloy composition and well width fluctuations on linewidth broadening and carrier lifetimes in semipolar InGaN quantum wells (Conference Presentation)

Tomas K. Uzdavinys, Daniel L. Becerra, Mounir D. Mensi, Ruslan Ivanov, Shuji Nakamura, Steven P. DenBaars, James S. Speck, Saulius Marcinkevicius

Author Affiliations +

Proceedings Volume 10532, Gallium Nitride Materials and Devices XIII; 105320P (2018) https://doi.org/10.1117/12.2289809
Event: SPIE OPTO, 2018, San Francisco, California, United States

Abstract

Band potential fluctuations in InGaN/GaN quantum wells (QWs) induce carrier localization that affects emission linewidth and carrier recombination rate. Alloy composition and well width variations are considered as main sources of the potential fluctuations and are often treated indiscriminately. However, their impact on the emission linewidth and the carrier lifetimes may be different. Besides, the impact of the QW width fluctuations on the linewidth could possibly be reduced via optimization of growth, while random alloy composition fluctuations can hardly be avoided. In this work, we have studied these effects in green-emitting semipolar (20-21) plane InGaN/GaN single QW structures of different well widths (2, 4 and 6 nm) and in structures with different number of QWs (1, 5 and 10). Experiments have been performed by scanning near-field photoluminescence (PL) spectroscopy. It has been found that the well width fluctuations, compared to the InGaN alloy composition variations, play a negligible role in defining the PL linewidth. In multiple QW structures, the alloy composition fluctuations are spatially uncorrelated between the wells. Despite that the 10 QW structure exceeds the critical thickness, no PL linewidth changes related to a structural relaxation have been detected. On the other hand, the well width fluctuations have a large impact on the recombination times. In-plane electric fields, caused by the nonplanarity of QW interfaces, separate electrons and holes into different potential minima increasing the lifetimes in wide QWs.

Conference Presentation

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Tomas K. Uzdavinys, Daniel L. Becerra, Mounir D. Mensi, Ruslan Ivanov, Shuji Nakamura, Steven P. DenBaars, James S. Speck, and Saulius Marcinkevicius "Impact of alloy composition and well width fluctuations on linewidth broadening and carrier lifetimes in semipolar InGaN quantum wells (Conference Presentation)", Proc. SPIE 10532, Gallium Nitride Materials and Devices XIII, 105320P (14 March 2018); https://doi.org/10.1117/12.2289809

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KEYWORDS

Quantum wells

Indium gallium nitride

Near field scanning optical microscopy

Electrons

Interfaces

Luminescence

Near field

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