Quantum-well laser diodes operating at 1.28um monolithically integrated on Ge substrate (Conference Presentation)

Jukka Viheriälä; Antti T. Aho; Riku Isoaho; Arto Aho; Antti Tukiainen; Mircea Guina

doi:10.1117/12.2292738

14 March 2018 Quantum-well laser diodes operating at 1.28μm monolithically integrated on Ge substrate (Conference Presentation)

Jukka Viheriälä, Antti T. Aho, Riku Isoaho, Arto Aho, Antti Tukiainen, Mircea Guina

Author Affiliations +

Proceedings Volume 10537, Silicon Photonics XIII; 105370U (2018) https://doi.org/10.1117/12.2292738
Event: SPIE OPTO, 2018, San Francisco, California, United States

Abstract

Here we demonstrate for the first time a GaInNAsSb/GaAs quantum well based laser diode with emission beyond 1.25 µm that is monolithically integrated on an artificial Ge substrate. Molecular beam epitaxy grown GaInNAsSb quantum wells enable gain from silicon transparency wavelength up to 1.55µm. Proposed material system paves the way for silicon photonics with high density monolithically integrated temperature insensitive gain elements (and electro-absorption in case of modulators). Compared with QD gain structures monolithically integrated on Ge/Si demonstrated earlier QW-based material system important advantages in single pass gain enabling the realization of devices with very short lengths and volume. Moreover, GaInNAsSb/GaAs QWs can exhibit efficient uncooled operation at temperatures as high as 80°C reducing the energy consumption imposed by active cooling of PICs. Presentation demonstrates low threshold (sub-25mA) directly modulated laser diodes using a short cavity (250µm) enabled by the high gain. Bandwidth characteristics of the material is studied with relative intensity noise (RIN) measurement. Hakki-Paoli measurement show gain up to 68 1/cm from a short gain element of 250µm in length. Preliminary burn-in results show that lasers operate hundreds of hours without any sign of degradation contributed by the close lattice matching between III-V and Ge.

Conference Presentation

Citation Download Citation

Jukka Viheriälä, Antti T. Aho, Riku Isoaho, Arto Aho, Antti Tukiainen, and Mircea Guina "Quantum-well laser diodes operating at 1.28μm monolithically integrated on Ge substrate (Conference Presentation)", Proc. SPIE 10537, Silicon Photonics XIII, 105370U (14 March 2018); https://doi.org/10.1117/12.2292738

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE