PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The III-V semiconductor AlGaAs is an ideal material for nonlinear optics. It has large second and third order nonlinearities, a low two-photon absorption coefficient at the half band gap and allows for the easy fabrication of integrated optical devices. In addition, AlGaAs can be used to directly integrate photodiodes, modulators and passive optical elements on the same chip as the nonlinear elements. This talk will highlight the benefits of this nonlinear material for the generation of entangled photon states using both spontaneous down conversion and spontaneous four wave mixing.
Stewart J. Aitchison
"Entangled photon generation in AlGaAs waveguides (Conference Presentation)", Proc. SPIE 10540, Quantum Sensing and Nano Electronics and Photonics XV, 1054029 (14 March 2018); https://doi.org/10.1117/12.2289449
ACCESS THE FULL ARTICLE
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
Stewart J. Aitchison, "Entangled photon generation in AlGaAs waveguides (Conference Presentation)," Proc. SPIE 10540, Quantum Sensing and Nano Electronics and Photonics XV, 1054029 (14 March 2018); https://doi.org/10.1117/12.2289449