High-responsivity photodetection using a single p-type GaAs nanowire (Conference Presentation)

Hassan Ali; Yunyan Zhang; Ana M. Sanchez; Huiyun Liu; Xiulai Xu

doi:10.1117/12.2299472

14 March 2018 High-responsivity photodetection using a single p-type GaAs nanowire (Conference Presentation)

Hassan Ali, Yunyan Zhang, Ana M. Sanchez, Huiyun Liu, Xiulai Xu

Proceedings Volume 10543, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XV; 105430J (2018) https://doi.org/10.1117/12.2299472
Event: SPIE OPTO, 2018, San Francisco, California, United States

Abstract

Foreign-catalyzed assisted grown nanowires deteriorate the performance of optoelectronic devices because of incorporation of foreign impurities into the nanowires. We report on growth self-catalyzed p-type GaAs nanowires (NWs) with pure zinc blende (ZB) structure, and the fabrication of single-NW-based photodetector. The carrier mobility and concentration of GaAs field effect transistor are characterized both at room temperature and at low temperature respectively. Due to the absence of stacking faults and single crystal phase of the NWs, the photodetector exhibits room-temperature high photo-responsivity over than 105 A W-1 and great specific detectivity, which outperforms previously reported NW-based photodetectors. These results demonstrate that these self-catalyzed pure-ZB GaAs NWs to be promising candidates for optoelectronics applications. In addition, optoelectronic properties of single quantum dots embedded in single nanowires will be represented with an applied magnetic field.

Conference Presentation

Citation Download Citation

Hassan Ali, Yunyan Zhang, Ana M. Sanchez, Huiyun Liu, and Xiulai Xu "High-responsivity photodetection using a single p-type GaAs nanowire (Conference Presentation)", Proc. SPIE 10543, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XV, 105430J (14 March 2018); https://doi.org/10.1117/12.2299472

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