Structural and optoelectronic properties of ZnGaO thin film by pulsed laser deposition

Xiaowei Han; Li Wang; Shufeng Li; Dongwen Gao; Yong Pan

doi:10.1117/12.2284289

12 January 2018 Structural and optoelectronic properties of ZnGaO thin film by pulsed laser deposition

Xiaowei Han, Li Wang, Shufeng Li, Dongwen Gao, Yong Pan

Proceedings Volume 10622, 2017 International Conference on Optical Instruments and Technology: Micro/Nano Photonics: Materials and Devices; 1062207 (2018) https://doi.org/10.1117/12.2284289
Event: International Conference on Optical Instruments and Technology 2017, 2017, Beijing, China

Abstract

ZnO has attracted much attention because of its high-energy gap and exciton binding energy at room temperature. Compared to ZnO thin films, ZnGaO thin films are more resistive to oxidation and have smaller deformation of lattice. In this study, the high purity ZnSe and Ga₂O₃ powders were weighted at a molar ratio of 18:1. Se was oxidized to Se₂O₃ and separated from the mixture powders by using conventional solid state reaction method in air, and the ZnGaO ceramic target was prepared. We fabricated the ZnGaO films on silica glass by pulsed laser deposition (PLD) method under different oxygen pressure at room temperature. The as-grown films were tested by X-ray diffraction and atomic force microscope (AFM) to diagnose the crystal structure and surface morphology. Moreover, we obtained the optical transmittance of ZnGaO film and found that the electrical conductivity capacity varied with the increase of oxygen pressure.

Citation Download Citation

Xiaowei Han, Li Wang, Shufeng Li, Dongwen Gao, and Yong Pan "Structural and optoelectronic properties of ZnGaO thin film by pulsed laser deposition", Proc. SPIE 10622, 2017 International Conference on Optical Instruments and Technology: Micro/Nano Photonics: Materials and Devices, 1062207 (12 January 2018); https://doi.org/10.1117/12.2284289

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