A Lithographic Study of Photoresists Containing a Base Soluble Dye

M. Cagan; M. Blanco; V. Wise; P. Trefonas III; B. K. Daniels; C. McCants

doi:10.1117/12.953064

30 January 1989 A Lithographic Study of Photoresists Containing a Base Soluble Dye

M. Cagan, M. Blanco, V. Wise, P. Trefonas III, B. K. Daniels, C. McCants

Proceedings Volume 1086, Advances in Resist Technology and Processing VI; (1989) https://doi.org/10.1117/12.953064
Event: 1989 Santa Clara Symposium on Microlithography, 1989, San Jose, CA, United States

Abstract

This paper examines the performance of a specific family of dyed resists. The effect of dye con-centration on the line profiles of a homologous series of positive photoresists is studied. Usable images are obtained with dye concentrations of 0%, 0.4%, and 0.6% (percentage of the formulation). Both standard softbake or a softbake plus post-exposure bake (PEB) processes are used. Resist linewidths and cross-sections are measured on substrates that are representative of those encountered on integrated circuits. Optical exposure and develop simulation parameters (two developers) for this family of resists are also extracted.

Citation Download Citation

M. Cagan, M. Blanco, V. Wise, P. Trefonas III, B. K. Daniels, and C. McCants "A Lithographic Study of Photoresists Containing a Base Soluble Dye", Proc. SPIE 1086, Advances in Resist Technology and Processing VI, (30 January 1989); https://doi.org/10.1117/12.953064

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