An Experimental Determination of the Optical Lithographic Requirements for Sub-Micron Projection Printing

John S. Petersen

doi:10.1117/12.953182

25 July 1989 An Experimental Determination of the Optical Lithographic Requirements for Sub-Micron Projection Printing

John S. Petersen

Author Affiliations +

Proceedings Volume 1088, Optical/Laser Microlithography II; (1989) https://doi.org/10.1117/12.953182
Event: 1989 Santa Clara Symposium on Microlithography, 1989, San Jose, CA, United States

Abstract

New optical lithographic technologies for 16 Megabit DRAM mass production will be required to generate workable 0.5 to 0.6 micron geometries for several of the device's levels. This is because current stepper and resist technology, while capable of resolving in this range of geometries, can not adequately do mass production processing at these levels due to optical limitations. These limitations have been described via the Rayleigh equation: W = k1 λ/NA

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John S. Petersen "An Experimental Determination of the Optical Lithographic Requirements for Sub-Micron Projection Printing", Proc. SPIE 1088, Optical/Laser Microlithography II, (25 July 1989); https://doi.org/10.1117/12.953182

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