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InGaN-based resonant-cavity light-emitting diode (RC-LED) structure with an embedded 1/4λ-stack nanopipe-GaN/undoped-GaN distributed Bragg reflectors (DBR) structure have been demonstrated. High refractive index Si-heavily doped GaN (n+-AlGaN:Si) epitaxial layers are transformed into low effective refractive index nanopipe AlGaN layers in the n+-AlGaN:Si/u-GaN stack structure through a doping-selective electrochemical and a lateral wet etching process. The anisotropic optical property of the nanopipe structure in the DBR structure provides an anisotropic and polarized high light reflectance spectra from ultra-violet to green light regions. The central wavelength blueshifted property with a high reflectivity stopband was observed in the angle-dependent reflectance spectra of the nanopipe DBR structure similar to conventional dielectric DBR structure. Ultra-short cavity length in the GaN-based resonant-cavity light-emitting diode had been realized by using the embedded and conductive nanopipe DBR with a narrow divergent angle property. Narrow linewidth, single cavity mode, and high linear polarized light are observed in the GaN-based RC-LED with an anisotropic nanopipe DBR structure which has the potential for the linear polarized vertical cavity surface emitting laser applications.
Chia-Feng Lin andJung Han
"GaN-based resonant-cavity light-emitting diode with an embedded porous-AlGaN distributed Bragg reflector (Conference Presentation)", Proc. SPIE 10940, Light-Emitting Devices, Materials, and Applications, 109400M (4 March 2019); https://doi.org/10.1117/12.2511394
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