Simulation of statistical effects in exposure and development of EUV photoresists using the percolation and diffusion limited aggregation model

Akira Sasaki

doi:10.1117/12.2515434

26 March 2019 Simulation of statistical effects in exposure and development of EUV photoresists using the percolation and diffusion limited aggregation model

Akira Sasaki

Author Affiliations +

Proceedings Volume 10957, Extreme Ultraviolet (EUV) Lithography X; 109571Q (2019) https://doi.org/10.1117/12.2515434
Event: SPIE Advanced Lithography, 2019, San Jose, California, United States

Abstract

A simulation model to analyze exposure and development processes of EUV resists is presented. The model combines percolation model and diffusion limited aggregation (DLA) model to simulate dissolution of the resist molecules into developer, which has been exposed randomly by the EUV photons. We investigate the roughness of the pattern caused by the photon shot noise with the model as a function of line width and dose.

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Akira Sasaki "Simulation of statistical effects in exposure and development of EUV photoresists using the percolation and diffusion limited aggregation model", Proc. SPIE 10957, Extreme Ultraviolet (EUV) Lithography X, 109571Q (26 March 2019); https://doi.org/10.1117/12.2515434

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