Addressing challenges in the mitigation of stochastic effects

Hidetami Yaegashi; Arisa Hara

doi:10.1117/12.2514899

25 March 2019 Addressing challenges in the mitigation of stochastic effects

Hidetami Yaegashi, Arisa Hara

Proceedings Volume 10960, Advances in Patterning Materials and Processes XXXVI; 109600K (2019) https://doi.org/10.1117/12.2514899
Event: SPIE Advanced Lithography, 2019, San Jose, California, United States

Abstract

Towards realistic adoption of EUV technology, material/process induced defect must be considerable problem. Several excellent study have been introduced before and it mainly focused on the relation between defect number and pattern size and pattern pitch. Unfortunately, the study related defect transfer behavior haven’t been quite few, despite defect inspection is executed through top-down SEM.

In this study, latent defect on via hole pattern, especially, the behavior of invisible hole bottom area was focused on and we tied to clarify the exist of hidden missing defect utilizing unique RIE technique in hole image transfer onto under layer.

Citation Download Citation

Hidetami Yaegashi and Arisa Hara "Addressing challenges in the mitigation of stochastic effects", Proc. SPIE 10960, Advances in Patterning Materials and Processes XXXVI, 109600K (25 March 2019); https://doi.org/10.1117/12.2514899

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