Paper
24 April 2019 Photoluminescence properties and characterization of LiF-based imaging detector irradiated by 10 keV XFEL beam
F. Bonfigli, N. J. Hartley, Y. Inubushi, M. Koenig, T. Matsuoka, S. Makarov, R. M. Montereali, E. Nichelatti, N. Ozaki, M. Piccinini, S. Pikuz, T. Pikuz, D. Sagae, M. A. Vincenti, M. Yabashi, T. Yabuuchi
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Abstract
We present the study of optical and spectral properties of radiation-induced stable point defects, known as color centers (CCs), in lithium fluoride (LiF) for the detection of 10 keV XFEL beam at Spring-8 Angstrom Compact free electron LAser (SACLA) in Japan. A thick LiF crystal was irradiated in four spots with 10 keV XFEL beam (pulse duration = 10 fs) with different number of accumulated shots. After irradiation the colored-LiF spots were characterized with an optical microscope in fluorescence mode and their photoluminescence intensity and spectra were analyzed.
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
F. Bonfigli, N. J. Hartley, Y. Inubushi, M. Koenig, T. Matsuoka, S. Makarov, R. M. Montereali, E. Nichelatti, N. Ozaki, M. Piccinini, S. Pikuz, T. Pikuz, D. Sagae, M. A. Vincenti, M. Yabashi, and T. Yabuuchi "Photoluminescence properties and characterization of LiF-based imaging detector irradiated by 10 keV XFEL beam", Proc. SPIE 11035, Optics Damage and Materials Processing by EUV/X-ray Radiation VII, 110350N (24 April 2019); https://doi.org/10.1117/12.2520907
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KEYWORDS
Laser induced fluorescence

Luminescence

Crystals

Sensors

Laser crystals

X-rays

Image sensors

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