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9 September 2019 Highly controlled lateral heterostructures in 2D transition metal dichalcogenides for optoelectronic applications (Conference Presentation)
Hossein Taghinejad, Ali A. Eftekhar, Ali Adibi
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Proceedings Volume 11081, Active Photonic Platforms XI; 1108110 (2019) https://doi.org/10.1117/12.2528286
Event: SPIE Nanoscience + Engineering, 2019, San Diego, California, United States
Abstract
Two-dimensional (2D) transition-metal dichalcogenides (TMDCs) are an excellent candidate for realization of a large range of optoelectronic devices on a wide variety of substrates. In this talk, a new approach based on alloying is presented for the formation of lateral heterostructures in 2D TMDCs with unprecedented control over the in-plane device profile and operation wavelength. This approach can be used for post-growth tuning of the optoelectronic properties of the planar structures as well as fabrication of optoelectronic devices such as planar diodes, light emitters, and photodetectors with exotic characteristics. Details of the material formation and properties as well as device fabrication and characterization in such 2D structures will be presented and discussed. In addition, the potential of this platform for the formation of advanced quantum nanostructures structures such as quantum dots and quantum wires will be discussed.
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Hossein Taghinejad, Ali A. Eftekhar, and Ali Adibi "Highly controlled lateral heterostructures in 2D transition metal dichalcogenides for optoelectronic applications (Conference Presentation)", Proc. SPIE 11081, Active Photonic Platforms XI, 1108110 (9 September 2019); https://doi.org/10.1117/12.2528286
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KEYWORDS
Heterojunctions
Optoelectronics
Transition metals
Quantum dots
Optoelectronic devices
Control systems
Diodes
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