Paper
6 September 2019 Electronic structure and optical properties of Mg and Al doped ZnO using (TB-mBJ) modified Becke Johnson potential study
P. Sai Charan, N. Saketh, R. Mahesh, M. Anand Pandarinath
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Abstract
The electronic structure and ground state properties of SC16-ZnO, Zn7Mg1O8 and Zn7Al1O8 were studied using Wien2k code. The doping effect of magnesium and aluminium on band structure of Zinc Oxide reveals that the profiles are identical, however slightly shifted due to band broadening. Using super cell approach the electronic and optical properties are also studied for Zn7Al1O8 and Zn7Mg1O8. The calculated parameters like onset of critical point or threshold value, fundamental band gap and dielectric functions are reported for SC16-ZnO, Zn7Mg1O8 and Zn7Al1O8.
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P. Sai Charan, N. Saketh, R. Mahesh, and M. Anand Pandarinath "Electronic structure and optical properties of Mg and Al doped ZnO using (TB-mBJ) modified Becke Johnson potential study", Proc. SPIE 11126, Wide Bandgap Materials, Devices, and Applications IV, 111260F (6 September 2019); https://doi.org/10.1117/12.2525204
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KEYWORDS
Zinc

Dielectrics

Zinc oxide

Optical properties

Aluminum

Magnesium

Doping

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