Paper
18 December 2019 Room-temperature high-speed InGaAs/InP single-photon detector with high detection efficiency
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Proceedings Volume 11339, AOPC 2019: Quantum Information Technology; 113390F (2019) https://doi.org/10.1117/12.2547625
Event: Applied Optics and Photonics China (AOPC2019), 2019, Beijing, China
Abstract
InGaAs/InP avalanche photodiodes (APDs) are one of the optimum choices for the practical applications requiring singlephoton detection in the near-infrared. In this paper, we demonstrate a high-speed single-photon detector (SPD) based on an APD working at room temperature with high detection efficiency. Ultrashort pulses are employed as the gating signals applied on the APD to reduce the avalanche time, efficiently reducing the error counts which include the dark count and afterpulses. Low-pass filters are cascaded to remove the spike noise down to the thermal noise level, guaranteeing the extraction of the photon-induced avalanche signal. Finally, the detection efficiency of 50.4% at 1310 nm is achieved with the dark count rate (DCR) of 3.1×10-4/gate and the afterpulse probability (AP) of 5.6% at 1 GHz at the temperature of ~21℃. This room-temperature SPD with such high performance could further expanding the APD’s applications in ranging and imaging systems.
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Zhihe Liu, Qilai Fei, Yan Liang, and Heping Zeng "Room-temperature high-speed InGaAs/InP single-photon detector with high detection efficiency", Proc. SPIE 11339, AOPC 2019: Quantum Information Technology, 113390F (18 December 2019); https://doi.org/10.1117/12.2547625
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KEYWORDS
Avalanche photodetectors

Single photon detectors

Signal to noise ratio

Ultrafast phenomena

Quantum information

Ranging

Sensors

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