Presentation + Paper
13 October 2020 Accurate mapping of dose variations on EUV scanners using dose-to-clear exposures and optical ellipsometry
Author Affiliations +
Abstract
In this work, we demonstrate the use of a scatterometry-based technique to accurately monitor the dose variations seen on an EUV scanner. By carefully setting up the exposure conditions and data analysis, we can separate scanner-driven dose effects, mask reflectivity changes and process variations into its individual components. These measurements have a very high repro and throughput allowing us to use this technique to both monitor and provide active feedback to improve overall EUV cluster stability. We have used this technique to achieve a day-to-day dose variation of +-0.5% over a 6-month period on the NXE:3400B at IMEC.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vineet Vijayakrishnan Nair, Lieve Van Look , Remko Aubert, and Eric Hendrickx "Accurate mapping of dose variations on EUV scanners using dose-to-clear exposures and optical ellipsometry", Proc. SPIE 11517, Extreme Ultraviolet Lithography 2020, 115170O (13 October 2020); https://doi.org/10.1117/12.2572993
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CITATIONS
Cited by 1 scholarly publication.
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KEYWORDS
Scanners

Extreme ultraviolet lithography

Semiconducting wafers

Ellipsometry

EUV optics

Metrology

Calibration

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