AlGaInAs / InP laser heterostructure improvement

Alex Chelny; Alex Savchuk; Oleg Rabinovich; Yuriy Akhmerov; Mikhail Mezhenny; Sergey Didenko

doi:10.1117/12.2577020

5 March 2021 AlGaInAs / InP laser heterostructure improvement

Alex Chelny, Alex Savchuk, Oleg Rabinovich, Yuriy Akhmerov, Mikhail Mezhenny, Sergey Didenko

Proceedings Volume 11705, Novel In-Plane Semiconductor Lasers XX; 117051E (2021) https://doi.org/10.1117/12.2577020
Event: SPIE OPTO, 2021, Online Only

Conference Poster

Abstract

By modeling, the potential barrier effect on the electroluminescence wavelength spread was determined and QW thickness was determined as well. It was achieved during the laser heterostructures growth by MOCVD. The theoretical model was verified by experimental obtained results. For samples grown in a process with a high growth stability rate, a larger spread in the electroluminescence wavelength was detected for a sample with a smaller Al atoms fraction in the barrier layer

Citation Download Citation

Alex Chelny, Alex Savchuk, Oleg Rabinovich, Yuriy Akhmerov, Mikhail Mezhenny, and Sergey Didenko "AlGaInAs / InP laser heterostructure improvement", Proc. SPIE 11705, Novel In-Plane Semiconductor Lasers XX, 117051E (5 March 2021); https://doi.org/10.1117/12.2577020

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