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In this talk I will discuss recent collaborative work between the University of Washington, Notre Dame, and Oak Ridge National Laboratory in developing a new electron microscopy technique to perform nano-ellipsometry measurements on individual nanoparticles. Focus will be made on inverting the low-loss electron energy-loss spectrum to retrieve the complex-valued and frequency-dependent dielectric functions of a series of individual tin-doped indium oxide nanocrystals with tin doping concentration ranging from 1−10 atomic percent. This method, devoid from ensemble averaging, illustrates the potential for nanoscale electron-beam ellipsometry measurements on materials that cannot be prepared in bulk form or as thin films.
David Masiello
"Electron Beam Infrared Nano-Ellipsometry of Individual Semiconductor Nanoparticles", Proc. SPIE 11799, Physical Chemistry of Semiconductor Materials and Interfaces XX, 117990S (5 August 2021); https://doi.org/10.1117/12.2596191
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David Masiello, "Electron Beam Infrared Nano-Ellipsometry of Individual Semiconductor Nanoparticles," Proc. SPIE 11799, Physical Chemistry of Semiconductor Materials and Interfaces XX, 117990S (5 August 2021); https://doi.org/10.1117/12.2596191