Presentation + Paper
4 March 2022 1550nm triple junction laser diode for long range LiDAR
Author Affiliations +
Proceedings Volume 11983, High-Power Diode Laser Technology XX; 119830P (2022) https://doi.org/10.1117/12.2608223
Event: SPIE LASE, 2022, San Francisco, California, United States
Abstract
We present a triple junction high power laser diode at 1550nm based on AlInGaAs/InP material system. The device was developed, fabricated, and tested. The laser stacks three AlInGaAs lasers epitaxially connected by two tunnel junctions and grown on InP substrate. The monolithic laser structure with tunnel junction layers is designed in a way to reduce the stress and improve the heat dissipation. Each tunnel junctions is formed with an n-type InGaAs layer and a p-type InGaAs layer. The active area of each junction comprises AlInGaAs barrier and quantum well layers. The design leads to three times the output power of a single junction laser and reaches 1W/A slope efficiency. We demonstrate over 100W peak optical output power at 100A with a 350m aperture and 10 nsec pulse width. A low operating voltage can be achieved with such triple junction design, thus the wall-plug efficiency is two times better. The monolithic triple junction with overall small source size allows efficient optic or fiber coupling, and is an ideal source for applications such as long range LiDAR. Using this new triple junction 1550nm laser diode we benchmark against 905nm in a single-emitter LiDAR for performance comparison. By considering eye safety standards, distance, target reflectivity, and atmospheric loss, the photon budget of 1550nm triple junction can be 80 times more than 905nm. With such advantage, a LiDAR with the new 1550nm triple junction can outperform 905nm by more than 60 times in SNR and more than 24 times in detection probability at a distance longer than 200m.
Conference Presentation
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sidi Aboujja, Daniel Chu, and David Bean "1550nm triple junction laser diode for long range LiDAR", Proc. SPIE 11983, High-Power Diode Laser Technology XX, 119830P (4 March 2022); https://doi.org/10.1117/12.2608223
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KEYWORDS
Semiconductor lasers

LIDAR

Signal to noise ratio

Receivers

Eye

Indium gallium arsenide

Avalanche photodetectors

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