Depth measurement using high-voltage SEM that changes the inclination of the incident beam

JaeHyung Ahn; KwangEun Kim; Souk Kim; Younghoon Sohn

doi:10.1117/12.2614186

26 May 2022 Depth measurement using high-voltage SEM that changes the inclination of the incident beam

JaeHyung Ahn, KwangEun Kim, Souk Kim, Younghoon Sohn

Proceedings Volume 12053, Metrology, Inspection, and Process Control XXXVI; 1205324 (2022) https://doi.org/10.1117/12.2614186
Event: SPIE Advanced Lithography + Patterning, 2022, San Jose, California, United States

Conference Poster

Abstract

As the development technology of 3D NAND advances, it becomes increasingly important to measure the mid and bottom profiles of High-Aspect Ratio(HAR) hole or line structures. To estimate the HAR structure profile, SEM is generally used to measure the bottom CD using a high acceleration voltage, but there are cases where the measured CD does not represent actual bottom CD of the structure. To solve this problem, we propose a method of inferring the actual depth at which the measured CD is located by examining the CD change according to the change in the accelerating voltage of the electron beam and the inclination of the incident beam. After inferring the CD measured from the actual hole and line structure, the method was validated on samples with geometrically known structures. It is expected that the method approached in this paper can be used for 3D microstructure measurement using SEM technology in the future.

Conference Presentation

Citation Download Citation

JaeHyung Ahn, KwangEun Kim, Souk Kim, and Younghoon Sohn "Depth measurement using high-voltage SEM that changes the inclination of the incident beam", Proc. SPIE 12053, Metrology, Inspection, and Process Control XXXVI, 1205324 (26 May 2022); https://doi.org/10.1117/12.2614186

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