Paper
1 November 2021 Low dark current and high bandwidth waveguide photodetector by selective area growth technique for photonic integration
Author Affiliations +
Proceedings Volume 12057, Twelfth International Conference on Information Optics and Photonics; 120571F (2021) https://doi.org/10.1117/12.2604785
Event: Twelfth International Conference on Information Optics and Photonics, 2021, Xi'an, China
Abstract
We demonstrate a low current and high bandwidth waveguide photodetector by selective area growth technique. The waveguide photodiode has been fully fabricated by a photonic integration process. The photodiode epitaxial structure is selectively regrown on wafer with SiO2-masked SOA mesas. Before SAG of photodetector layers, SOA mesas are etched into non-reentrant configuration. The SAG process is carried out in low-pressure MOCVD reactor at a high growth temperature of 680 °≅ and growth rate of 5Å/𝑠. Combination of low-speed Ar/Cl2/CH4 dry etching and wet etching is used to define PD mesas. PD mesas are arranged <300μm away from SOA mesa to minimize the growth rate enhancement of SAG. The photodetector is evanescently coupled with a 2μm wide rib waveguide defined by ICP etching. The PD is passivated with 600nm SiO2 by PECVD. The fabricated waveguide photodiode exhibits a dark current of 242pA at -3V, fiber-to-chip responsivity up to 0.18A/W and 3dB electrical bandwidth of 20GHz. The performance shows hardly no compromise when comparing to that of normal discrete devices. Those results lay good foundations for high-function photonic integration circuits in near future.
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Feng Xiao, Qin Han, Han Ye, Shuang Wang, ZiQing Lu, and Fan Xiao "Low dark current and high bandwidth waveguide photodetector by selective area growth technique for photonic integration", Proc. SPIE 12057, Twelfth International Conference on Information Optics and Photonics, 120571F (1 November 2021); https://doi.org/10.1117/12.2604785
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KEYWORDS
Waveguides

Photodetectors

Photodiodes

Photonic integrated circuits

Capacitance

Semiconducting wafers

Etching

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