Coherent radiation from a broad-area semiconductor laser in an external cavity

Robert G. Waarts; Amos A. Hardy; David G. Mehuys; William S. Streifer; David F. Welch

doi:10.1117/12.18253

1 May 1990 Coherent radiation from a broad-area semiconductor laser in an external cavity

Robert G. Waarts, Amos A. Hardy, David G. Mehuys, William S. Streifer, David F. Welch

Proceedings Volume 1219, Laser Diode Technology and Applications II; (1990) https://doi.org/10.1117/12.18253
Event: OE/LASE '90, 1990, Los Angeles, CA, United States

Abstract

A compact external cavity configuration consisting of a gain guided array, a graded index lens, and a mode selective mirror was investigated. Results obtained from this external cavity configuration show 410 mW total power (CW) with a diffraction limited far field pattern.

Citation Download Citation

Robert G. Waarts, Amos A. Hardy, David G. Mehuys, William S. Streifer, and David F. Welch "Coherent radiation from a broad-area semiconductor laser in an external cavity", Proc. SPIE 1219, Laser Diode Technology and Applications II, (1 May 1990); https://doi.org/10.1117/12.18253

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