Lisa V. Winkler,1,2 Kirsten Gerritsma,1 Albert van Reeshttps://orcid.org/0000-0002-8862-5413,1 Philip P. J. Schrinner,3 Marcel Hoekman,3 Ronald Dekker,3 Peter J. M. van der Slot,1 Christian Nölleke,2 Klaus-J. Boller1
1Univ. Twente (Netherlands) 2TOPTICA Photonics AG (Germany) 3LioniX International BV (Netherlands)
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We present a hybrid-integrated extended cavity diode laser tunable around 637 mn, with a total tuning range of 8 nm, allowing to address the zero-phonon line of nitrogen vacancy centers. The laser provides wide mode-hop free tuning over 43.6 GHz and a narrow intrinsic linewidth below 10 kHz. The maximum output power is 2.5 mW in a single-mode fiber, corresponding to an on-chip power of 4.0 mW. The laser is assembled in a standard laser housing and fiber-pigtailed.
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Lisa V. Winkler, Kirsten Gerritsma, Albert van Rees, Philip P. J. Schrinner, Marcel Hoekman, Ronald Dekker, Peter J. M. van der Slot, Christian Nölleke, Klaus-J. Boller, "Silicon nitride hybrid-integrated diode laser at 637 nm," Proc. SPIE 12424, Integrated Optics: Devices, Materials, and Technologies XXVII, 124241K (17 March 2023); https://doi.org/10.1117/12.2667809