Presentation + Paper
15 March 2023 Near unity internal quantum efficiency and reliable vertical-cavity surface-emitting lasers
Author Affiliations +
Abstract
Vertical-cavity surface-emitting lasers (VCSELs) with low power consumption and high efficiency offer excellent characteristics for many applications. In this report, we design and demonstrate GaAs-based 940 nm VCSEL devices with different output mirror reflectivity values demonstrating slope efficiency from 0.97-1.16 (W/A) and show near unity internal quantum efficiency and low internal loss of 6.6 (cm-1) at room temperature by using WIN Semiconductor 6-inch GaAs VCSEL wafer foundry service. Furthermore, the high temperature reliability test results guarantee quite long equivalent 14.6 years of operating time and stability.
Conference Presentation
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wei-Hao Huang, Kai-Lun Chi, Chun-Tse Chang, Yin-Hsiang Lin, Kai-Sin Cho, and Tien-Chang Lu "Near unity internal quantum efficiency and reliable vertical-cavity surface-emitting lasers", Proc. SPIE 12439, Vertical-Cavity Surface-Emitting Lasers XXVII, 124390I (15 March 2023); https://doi.org/10.1117/12.2648254
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Vertical cavity surface emitting lasers

Internal quantum efficiency

Semiconducting wafers

Reliability

Oxidation

Oxides

Gallium arsenide

Back to Top