Paper
2 March 2023 Comparison between various structures of dilute-nitride InGaAsN quantum well lasers in terms of their main electronic properties
Author Affiliations +
Proceedings Volume 12493, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies XI; 124931T (2023) https://doi.org/10.1117/12.2643158
Event: Advanced Topics in Optoelectronics, Microelectronics and Nanotechnologies 2022, 2022, Constanta, Romania
Abstract
In the last two decades, quantum well (QW) lasers have been used for a wide range of applications at wavelengths spanning on a very large domain and based on various material systems. A very interesting such material system is InGaAsN with dilute-nitride. We performed a comparison, by means of LASTIP simulations, between several structures of QW lasers based on this alloy, with the purpose of finding the laser structure which constitutes the best choice for being applied in practical situations with the most convenient performance parameters required in every case.
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andrei Drăgulinescu and Mihail Dumitrescu "Comparison between various structures of dilute-nitride InGaAsN quantum well lasers in terms of their main electronic properties", Proc. SPIE 12493, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies XI, 124931T (2 March 2023); https://doi.org/10.1117/12.2643158
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Quantum wells

External quantum efficiency

Quantum efficiency

Cladding

Gallium

Gallium arsenide

Aluminum

Back to Top