Paper
14 February 2023 Design of a high performance Sn-doped ZnO thin film MSM UV photodetector
Yantao Liu, Wenxia Wang, Jianping Ma
Author Affiliations +
Proceedings Volume 12589, International Conference on Optical Technology, Semiconductor Materials, and Devices (OTSMD 2022); 1258908 (2023) https://doi.org/10.1117/12.2668855
Event: International Conference on Optical Technology, Semiconductor Materials, and Devices (OTSMD 2022), 2022, Longyan, China
Abstract
Sn-doped ZnO thin film was prepared to enhance its photoelectric performance, and the ZnO based photodetector was fabricated by co-sputtering method. The I-V characteristic of the detector under different Sn doped DC sputtering power, the ultraviolet light source was set at 365 nm with 0.5 mW power. The examined photodetector performance manifest that optimum Sn doping level is investigated at 15 W, the maximum photocurrent and spectral responsivity are obtained to be 4.39 mA and 24.4 A/W, the fastest time response is obtained to be tr=29.0 ms and tf =33.2 ms.
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Yantao Liu, Wenxia Wang, and Jianping Ma "Design of a high performance Sn-doped ZnO thin film MSM UV photodetector", Proc. SPIE 12589, International Conference on Optical Technology, Semiconductor Materials, and Devices (OTSMD 2022), 1258908 (14 February 2023); https://doi.org/10.1117/12.2668855
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KEYWORDS
Sputter deposition

Tin

Zinc oxide

Doping

Photodetectors

Thin films

Dark current

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