PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
We demonstrate a method to control charge accumulation at the hetero interfaces of organic light-emitting diodes (OLEDs) using dipolar doping of hole transport layers (HTLs). Dipolar doping enables spontaneous orientation polarization (SOP) even in nonpolar HTLs, and consequently compensates the negative interface charge originating from SOP of the adjacent layer. This concept was applied to tris-(8-hydroxyquinolate) aluminum (Alq3) and tris (2- phenylpyridine)iridium (Ir(ppy)3)-based OLEDs. We confirmed that dipolar doping modifies the density and polarity of the net interface charge and reduces the luminescence loss due to both hole and electron accumulations via exciton polaron quenching.
Conference Presentation
(2023) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Yutaka Noguchi,Mihiro Takeda,Alexander Hofmann, andWolfgang Brütting
"Controlling charge accumulation properties at organic hetero-interfaces using dipolar doping of hole transport layers", Proc. SPIE 12659, Organic and Hybrid Light Emitting Materials and Devices XXVII, 1265905 (1 October 2023); https://doi.org/10.1117/12.2675356
ACCESS THE FULL ARTICLE
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
Yutaka Noguchi, Mihiro Takeda, Alexander Hofmann, Wolfgang Brütting, "Controlling charge accumulation properties at organic hetero-interfaces using dipolar doping of hole transport layers," Proc. SPIE 12659, Organic and Hybrid Light Emitting Materials and Devices XXVII, 1265905 (1 October 2023); https://doi.org/10.1117/12.2675356