Presentation + Paper
1 October 2023 Controlling charge accumulation properties at organic hetero-interfaces using dipolar doping of hole transport layers
Author Affiliations +
Abstract
We demonstrate a method to control charge accumulation at the hetero interfaces of organic light-emitting diodes (OLEDs) using dipolar doping of hole transport layers (HTLs). Dipolar doping enables spontaneous orientation polarization (SOP) even in nonpolar HTLs, and consequently compensates the negative interface charge originating from SOP of the adjacent layer. This concept was applied to tris-(8-hydroxyquinolate) aluminum (Alq3) and tris (2- phenylpyridine)iridium (Ir(ppy)3)-based OLEDs. We confirmed that dipolar doping modifies the density and polarity of the net interface charge and reduces the luminescence loss due to both hole and electron accumulations via exciton polaron quenching.
Conference Presentation
(2023) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Yutaka Noguchi, Mihiro Takeda, Alexander Hofmann, and Wolfgang Brütting "Controlling charge accumulation properties at organic hetero-interfaces using dipolar doping of hole transport layers", Proc. SPIE 12659, Organic and Hybrid Light Emitting Materials and Devices XXVII, 1265905 (1 October 2023); https://doi.org/10.1117/12.2675356
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Doping

Organic light emitting diodes

Interfaces

External quantum efficiency

Polarization

Quenching

Materials properties

Back to Top