Large-area silica films deposited on silicon substrates by a CO2 laser

Tamas Szoerenyi; P. Gonzalez; M. Dolores Fernandez; Juan Pou; Betty M. Leon-Fong; Mariano Perez-Amor

doi:10.1117/12.34713

1 August 1990 Large-area silica films deposited on silicon substrates by a CO2 laser

Tamas Szoerenyi, P. Gonzalez, M. Dolores Fernandez, Juan Pou, Betty M. Leon-Fong, Mariano Perez-Amor

Proceedings Volume 1279, Laser-Assisted Processing II; (1990) https://doi.org/10.1117/12.34713
Event: The International Congress on Optical Science and Engineering, 1990, The Hague, Netherlands

Abstract

Conventional (thermal) CVD of Si02 is a well established method widely used e.g. in the microelectronic industry. Recognizing the big success of CO2 laser induced CVD in depositing high quality amorphous silicon (a-Si) films from silane it is quite surprising that -to the best of our knowledge- there has been no report on a-SiQ thin film deposition initiated by a cw CO laser in parallel configuration. In this contribution we report the first results of a systematic study on cw CO2 laser induced CVD of silicon oxide films onto silicon wafers from SiH I N20 I Ar gas mixtures in parallel configuration in comparison with similar experiments for a-Si film formation. Gas mixture absorption behaviour and total pressure rise under laser irradiation demonstrate that the SiO production can be due to homogeneous gas heating similar to the a-Si:H deposition. The films deposited are characterized by IR transmission spectroscopy. The fact that well adhering silicon oxide films can be produced with reasonable growth rates by using a simple and inexpensive laser makes this method attractive for industrial applications.

Citation Download Citation

Tamas Szoerenyi, P. Gonzalez, M. Dolores Fernandez, Juan Pou, Betty M. Leon-Fong, and Mariano Perez-Amor "Large-area silica films deposited on silicon substrates by a CO2 laser", Proc. SPIE 1279, Laser-Assisted Processing II, (1 August 1990); https://doi.org/10.1117/12.34713

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