Band-gap engineering of III-V semiconductors by MBE using electron beam evaporation of Group III metals

Roger J. Malik; Leda M. Lunardi; Barry F. Levine; Clyde G. Bethea; Fabio Beltram; Stephen E. Ralph; Leslie C. Hopkins; Federico Capasso

doi:10.1117/12.20809

1 October 1990 Band-gap engineering of III-V semiconductors by MBE using electron beam evaporation of Group III metals

Roger J. Malik, Leda M. Lunardi, Barry F. Levine, Clyde G. Bethea, Fabio Beltram, Stephen E. Ralph, Leslie C. Hopkins, Federico Capasso

Author Affiliations +

Proceedings Volume 1285, Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors; (1990) https://doi.org/10.1117/12.20809
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States

Abstract

Graded band gap ITT-V semiconductor structures have been grown by molecular beam epitaxy using electron beam evaporation of Group III metals. The deposition rates of the Group III metals are measured and controlled in real-time using Inficon Sentinel III rate monitors. The rapid response of the electron beam evaporation sources allows precise alloy grading over distances as short as 1 nm. A variety of novel 111-V device structures have been realized by this technique.

Citation Download Citation

Roger J. Malik, Leda M. Lunardi, Barry F. Levine, Clyde G. Bethea, Fabio Beltram, Stephen E. Ralph, Leslie C. Hopkins, and Federico Capasso "Band-gap engineering of III-V semiconductors by MBE using electron beam evaporation of Group III metals", Proc. SPIE 1285, Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors, (1 October 1990); https://doi.org/10.1117/12.20809

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