Presentation
13 March 2024 Passively mode-locked monolithic diode lasers with a tapered gain section generating picosecond pulses with 45 W peak power at 780 nm
S. Wohlfeil, H. Christopher, J. Fricke, P. Della Casa, A. Maaßdorf, H. Wenzel, A. Knigge
Author Affiliations +
Proceedings Volume 12867, High-Power Diode Laser Technology XXII; 128670T (2024) https://doi.org/10.1117/12.3002428
Event: SPIE LASE, 2024, San Francisco, California, United States
Abstract
We present a passively mode-locked monolithic diode laser operating at 780 nm. It features a tapered gain section serving as a power booster and generates ultrashort pulses (~8 ps) with a peak power of approximately 45 W and a repetition rate of 6.6 GHz. The estimated beam propagation ratio is less than 1.3. This diode laser is intended as a compact and cost-efficient alternative to Ti:sapphire lasers for use in two-photon-polymerization-based 3D-printing systems.
Conference Presentation
© (2024) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. Wohlfeil, H. Christopher, J. Fricke, P. Della Casa, A. Maaßdorf, H. Wenzel, and A. Knigge "Passively mode-locked monolithic diode lasers with a tapered gain section generating picosecond pulses with 45 W peak power at 780 nm", Proc. SPIE 12867, High-Power Diode Laser Technology XXII, 128670T (13 March 2024); https://doi.org/10.1117/12.3002428
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KEYWORDS
Mode locking

Picosecond phenomena

Semiconductor lasers

Ultrafast phenomena

Terahertz spectroscopy

Two photon polymerization

Sapphire lasers

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