Life cycle assessment of etching processes for FDSOI transistors technologies

Mickaël Renaud; Aurélien Sarrazin; Joao Lopes-Barbosa; Yannick Rivoira; Isabelle Servin; François Boulard

doi:10.1117/12.3009969

9 April 2024 Life cycle assessment of etching processes for FDSOI transistors technologies

Mickaël Renaud, Aurélien Sarrazin, Joao Lopes-Barbosa, Yannick Rivoira, Isabelle Servin, François Boulard

Proceedings Volume 12958, Advanced Etch Technology and Process Integration for Nanopatterning XIII; 129580K (2024) https://doi.org/10.1117/12.3009969
Event: SPIE Advanced Lithography + Patterning, 2024, San Jose, California, United States

Abstract

The semiconductor industry is aware of its high resource consumption and overall impact on the environment and is working to minimize it. Especially, the use of perfluorocarbons (PFC) during the dry etching and deposit steps of device manufacturing is a major concern because of the extremely high global warming potential (GWP) and lifetime of most of those compounds. Consequently, plasma etching significantly contributes to CO₂ emissions for sub-28nm technologies on Scope 1 and 2 emissions. Currently, CEA-Leti is developing a 10nm node on FDSOI (Fully Depleted Silicon On Insulator) technology. In this framework, we present Life Cycle Assessment (LCA) of etching processes for FDSOI transistor technologies. A comparison of impacts between the 28nm node and 10 nm one is then conducted for FEOL and MEOL processes. Finally, based on these results, some eco-innovation proposals are discussed.

Conference Presentation

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Mickaël Renaud, Aurélien Sarrazin, Joao Lopes-Barbosa, Yannick Rivoira, Isabelle Servin, and François Boulard "Life cycle assessment of etching processes for FDSOI transistors technologies", Proc. SPIE 12958, Advanced Etch Technology and Process Integration for Nanopatterning XIII, 129580K (9 April 2024); https://doi.org/10.1117/12.3009969

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