Heterogeneous integration of III-V semiconductor material on a Silicon substrate presented a promising solution to the challenge of laser integration in Silicon photonics. This will greatly benefit sensitive applications such as Analog Radio over Fiber (ARoF) in achieving a low-cost, highly integrated, and limited noise architecture. Meanwhile, careful laser design and characterization are essential to allow for high power emission, wide tunable operation, and the reduction of Relative Intensity Noise (RIN) which are vital to the performance of the ARoF through enhancing the signal-to-noise ratio and dynamic range. This paper presents two designs of a ring-resonator-based widely tunable laser, all designed by the III-V Lab and fabricated at the CEA-Leti, with differences in their vernier filter and Sagnac mirrors configuration. These laser chips have been characterized and compared through their output power, wavelength tunability evaluation, and RIN under different bias conditions. The presented results show a threshold current≤40 mA, a large wavelength tunable range of up to 48 nm, and a low RIN of up to −150 dB/Hz
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