In the past few years, CEA LETI demonstrated MCT P on N photodiodes arrays achieving high level of detection for very low flux astronomy in the short wave infrared (SWIR), with dark currents values as low as 3 10−3 e-/s/pixel at 100K and high quantum efficiency. Persistence was also a key element to monitor for the development of this technology, and significant improvements were demonstrated in the frame of ALFA program. From this reference technology, LETI developed a brand new P on N process, focused on decreasing defectiveness and improving low frequency stability for MWIR high operating temperature (>130K) detectors for tactical application. In this spectral range, low noise stability is characterized by Random Telegraph Signal (RTS) and noise distribution tail. In the SWIR range, persistence would be the best signature to probe this low frequency stability. Declining this new generation process for the SWIR range, we present and discuss on dark current and persistence characterization on TV format 15μm pixel pitch study array designed for SWIR low flux application.
|