Electro-physical properties of surface-barrier diodes on low-resistance n-Cd0.96Mn0.04Te0.96Se0.04 crystals

V. Sklyarchuk; O. Kopach; P. Fochuk; O. Sklyarchuk; A. E. Bolotnikov; R. B. James

doi:10.1117/12.3027351

4 October 2024 Electro-physical properties of surface-barrier diodes on low-resistance n-Cd_0.96Mn_0.04Te_0.96Se_0.04 crystals

V. Sklyarchuk, O. Kopach, P. Fochuk, O. Sklyarchuk, A. E. Bolotnikov, R. B. James

Author Affiliations +

Proceedings Volume 13151, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXVI; 131510M (2024) https://doi.org/10.1117/12.3027351
Event: Optical Engineering + Applications, 2024, San Diego, California, United States

Conference Poster

Abstract

The electro-physical properties of Cd_0.96Mn_0.04Te_0.96Se_0.04 n-type conductivity single crystals with relatively low resistivity were studied. The determined resistivity of semiconductor single crystals Cd_0.96Mn_0.04Te_0.96Se_0.04 n-type conductivity is equal to ρ≈2 Ω-cm at 293K. The activation energy of dark conductivity, measured from the temperature dependence of the resistivity of the In/Cd_0.96Mn_0.04Te_0.96Se_0.04/In structure, is equal to ΔE≈0.11eV. From optical measurements of the absorption coefficient from the energy of photons in the region of large α, the band-gap width of the single crystal was found, which is equal to E_g=1.53eV. Diode structures of Ni/Cd_0.96Mn_0.04Te_0.96Se_0.04/In obtained by vacuum sputtering of Ni on the surface of a single crystal n-Cd_0.96Mn_0.04Te_0.96Se_0.04 were manufactured and studied. The rectification coefficient at a voltage of U=1V is equal to 10⁸. Within the framework of the Sah-Noys-Shockley carrier generation-recombination model, a quantitative match of the experimental measurements of the volt-ampere characteristics with the calculation was achieved.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

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V. Sklyarchuk, O. Kopach, P. Fochuk, O. Sklyarchuk, A. E. Bolotnikov, and R. B. James "Electro-physical properties of surface-barrier diodes on low-resistance n-Cd_0.96Mn_0.04Te_0.96Se_0.04 crystals", Proc. SPIE 13151, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXVI, 131510M (4 October 2024); https://doi.org/10.1117/12.3027351

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