Recent developments in the design of the epitaxial structure of an asymmetrical spacer layer tunnel (ASPAT) diode have included a quantum well next to the barrier. This leads to a substantially improved curvature coefficient due to a reduction in the leakage current, introducing yet further advantages over the standard ASPAT diode, which has temperature independence, zero bias operations, and a high dynamic range. This work has developed these diodes into a fully integrated miniature rectenna solution, which integrates an antenna, rectifier, and RC filter. This device targets an operating frequency of 26 GHz, where such a solution could see applications in wireless power transfer, energy harvesting, or signal detection. The current design uses a loop antenna, where the trace has been meandered to increase the electrical length whilst enabling the die size of the device to be reduced to 2x0.8 mm2. This size, whilst at mm-scale, enables an efficient antenna to be designed with a simulated gain of 2 dBi. Integrated into this design is a general voltage doubler circuit, consisting of a series capacitor, a shunt diode, and a series diode, with this circuit followed by an RC filter, a shunt capacitor and a resistor, integrated on-chip. The design includes bond pads allowing the device to be packaged in standard QFN packages or onto PCBs for testing. Measurements confirmed that these devices can detect a K-band signal, with a peak reading of 55.2 mV detected at 23.5 GHz.
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