A method to study the curvature limits of a mask process using a calibrated MPC model

Rachit Sharma; Kushlendra Mishra; Ingo Bork

doi:10.1117/12.3034685

12 November 2024 A method to study the curvature limits of a mask process using a calibrated MPC model

Rachit Sharma, Kushlendra Mishra, Ingo Bork

Proceedings Volume 13216, Photomask Technology 2024; 132161T (2024) https://doi.org/10.1117/12.3034685
Event: SPIE Photomask Technology + EUV Lithography, 2024, Monterey, California, United States

Abstract

In this paper, we present a methodology to analyze the mask curvature manufacturing limits using a calibrated mask process correction (MPC) model, that can simulate the exposure and etch characteristics of the process. The paper concludes that the method presented within can be applied to arrive at a realistic curvature MRC limit specification, which can then be tuned and further optimized, as applicable, based on real measurement data from the mask process.

Conference Presentation

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Rachit Sharma, Kushlendra Mishra, and Ingo Bork "A method to study the curvature limits of a mask process using a calibrated MPC model", Proc. SPIE 13216, Photomask Technology 2024, 132161T (12 November 2024); https://doi.org/10.1117/12.3034685

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