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Laser direct writing lithography (LDWL) technology has been widely adopted in chip manufacturing due to its cost-effectiveness and high flexibility[1]. However, the non-uniform distribution of light field intensity can significantly impact exposure results, potentially leading to wafer rework and increased production costs[2]. This study investigates the effects of light field intensity distribution on exposure performance using 550 nm laser direct writing technology. To optimize exposure results, a light field homogenization device based on a microlens array was employed. Comparative analysis revealed a substantial improvement in lithography outcomes following homogenization. This paper highlights the critical role of light field intensity distribution in determining exposure quality, providing valuable insights for the advancement of LDWL systems and optimizing exposure processes.
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Wei Zhao,Dandan Han, andYayi Wei
"Quantitative analysis of field intensity distribution effects on patterning results in laser direct writing lithography", Proc. SPIE 13216, Photomask Technology 2024, 1321626 (20 November 2024); https://doi.org/10.1117/12.3034616
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Wei Zhao, Dandan Han, Yayi Wei, "Quantitative analysis of field intensity distribution effects on patterning results in laser direct writing lithography," Proc. SPIE 13216, Photomask Technology 2024, 1321626 (20 November 2024); https://doi.org/10.1117/12.3034616